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Samsung 40nm NAND flash memory

Ilse Jurrien
Photokina report
Tuesday 19th, September 2006
Posted by: Ilse Jurrien

Samsung Electronics Co., the world leader in advanced semi-conductor technology solutions, announced major component technology advancements including the 40-nanometer (nm) 32-Gigabit (Gb) NAND flash, the first prototype of the next-generation of memory PRAM (Phase-change Random Access Memory), and a new System-on-Chip controller for the soon-to-be-released Hybrid Hard Disk Drive. “The phenomenal shift in the popularity of digital products that we are experiencing today is rooted in the virtually non-stop string of advances being seen in semiconductor technology,” said Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics’ at its sixth annual press conference held at the Shilla Hotel.

Read complete news story about : Samsung NAND
Samsung NAND

Samsung PRAM memory

Posted by: Ilse Jurrien Tuesday 19th, September 2006

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade a Phase-change Random Access Memory (PRAM). The company unveiled the 512Megabit (Mb) device at its sixth annual press conference in Seoul today. More scalable than any other memory architecture being researched, PRAM features the fast processing speed of RAM for its operating functions combined with the non-volatile features of flash memory for storage, giving it the nickname: perfect RAM.

Read complete story about Samsung PRAM

Samsung 32Gb NAND flash device

Posted by: Ilse Jurrien Wednesday 13th, September 2006

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced that it has developed the industry’s first 40-nanometer (nm) memory device. The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability, which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm.

Read complete story about Samsung 40nm NAND flash device

Samsung 32GB NAND flash memory

Posted by: Ilse Jurrien Tuesday 12th, September 2006

Samsung Electronics announced that it has developed the industry’s first 40-nanometer (nm) memory device. The Samsung 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND 32GB flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm. The 32Gb CTF memory was announced at the Samsung press conference in Seoul.

Read complete story about Samsung 64GB CF


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